Datasheet > MMBT6428LT1

MMBT6428LT1

更新时间： 2024-09-26 20:18:35

品牌	Logo	应用领域
迪贝电子 - DBLECTRO		放大器光电二极管晶体管
页数	文件大小	规格书
4页	472K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMBT6428LT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Is Samacsys：	N	Base Number Matches：	1

MMBT6428LT1 数据手册

AmplifierTransistors

NPN Silicon

MMBT6428LT1

MMBT6429LT1

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Value

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

6428LT1 6429LT1

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Vdc

6.0

Vdc

200

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

°C

T_J, T_stg

–55 to +150

DEVICE MARKING

MMBT6428LT1 = 1KM, MMBT6429LT1 = 1L

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

V _(BR)CEO

Vdc

(I _C= 1.0 mAdc, I _B= 0)

Collector–Base Breakdown Voltage

(I _C= 0.1mAdc, I _E= 0)

MMBT6428

—

MMBT6429

V _(BR)CBO

Vdc

MMBT6428

MMBT6429

—

(I _C= 0.1mAdc, I _E= 0)

Collector Cutoff Current

( V _CE= 30Vdc, )

I _CBO

µAdc

—

0.1

Collector Cutoff Current

( V _CB= 30Vdc, I _E= 0 )

Emitter Cutoff Current

( V _EB= 5.0Vdc, I _C= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

—

0.01

I _EBO

µAdc

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

DB LECTRO Inc. 3600 boul. Matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714 www.dblectro.com

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与MMBT6428LT1相关器件

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MMBT6428LT1_05	ONSEMI	获取价格	Amplifier Transistors NPN Silicon
MMBT6428LT1G	ONSEMI	获取价格	Amplifier Transistors NPN Silicon
MMBT6428LT3	ONSEMI	获取价格	200mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN
MMBT6428LT3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A
MMBT6429	SAMSUNG	获取价格	NPN (AMPLIFIER TRANSISTOR)
MMBT6429L	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A
MMBT6429LT1	DBLECTRO	获取价格	Transistor
MMBT6429LT1	LRC	获取价格	Amplifier Transistors(NPN Silicon)
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