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MMBT6429LT1 PDF预览

MMBT6429LT1

更新时间: 2024-11-20 22:26:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
8页 155K
描述
Amplifier Transistors(NPN Silicon)

MMBT6429LT1 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.2Base Number Matches:1

MMBT6429LT1 数据手册

 浏览型号MMBT6429LT1的Datasheet PDF文件第2页浏览型号MMBT6429LT1的Datasheet PDF文件第3页浏览型号MMBT6429LT1的Datasheet PDF文件第4页浏览型号MMBT6429LT1的Datasheet PDF文件第5页浏览型号MMBT6429LT1的Datasheet PDF文件第6页浏览型号MMBT6429LT1的Datasheet PDF文件第7页 
ON Semiconductort  
MMBT6428LT1  
MMBT6429LT1  
Amplifier Transistors  
NPN Silicon  
3
MAXIMUM RATINGS  
1
2
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Symbol  
6428LT1 6429LT1  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
50  
60  
45  
55  
CASE 318–08, STYLE 6  
SOT–23 (TO–236)  
Vdc  
Emitter–Base Voltage  
6.0  
Vdc  
COLLECTOR  
3
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
200  
mAdc  
C
Symbol  
Max  
Unit  
1
BASE  
(1)  
Total Device Dissipation FR–5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
2
EMITTER  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
qJA  
P
D
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
417  
qJA  
T , T  
J stg  
–55 to +150  
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
V
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
MMBT6428  
MMBT6429  
50  
45  
C
C
B
B
(I = 1.0 mAdc, I = 0)  
Collector–Base Breakdown Voltage  
(I = 0.1 mAdc, I = 0)  
V
Vdc  
(BR)CBO  
MMBT6428  
MMBT6429  
60  
55  
C
E
(I = 0.1 mAdc, I = 0)  
C
E
Collector Cutoff Current  
(V = 30 Vdc)  
I
µAdc  
µAdc  
µAdc  
CES  
0.1  
CE  
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
CBO  
0.01  
0.01  
CB  
Emitter Cutoff Current  
(V = 5.0 Vdc, I = 0)  
E
I
EBO  
EB  
C
1. FR–5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
November, 2001 – Rev. 2  
MMBT6428LT1/D  

MMBT6429LT1 替代型号

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