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MMBT6520LT1 PDF预览

MMBT6520LT1

更新时间: 2024-01-06 09:11:42
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管高压
页数 文件大小 规格书
8页 234K
描述
High Voltage Transistor

MMBT6520LT1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.24
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:COMMERCIAL
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

MMBT6520LT1 数据手册

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Order this document  
by MMBT6520LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
Motorola Preferred Device  
COLLECTOR  
3
1
BASE  
3
2
EMITTER  
1
2
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Symbol  
Value  
–350  
–350  
–5.0  
Unit  
Vdc  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
V
CEO  
V
CBO  
V
EBO  
Collector–Base Voltage  
Emitter–Base Voltage  
Vdc  
Vdc  
Base Current  
I
–250  
–500  
mA  
B
C
Collector Current — Continuous  
DEVICE MARKING  
MMBT6520LT1 = 2Z  
I
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
(1)  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board  
= 25°C  
Derate above 25°C  
P
D
225  
mW  
T
A
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
θJA  
P
D
(2)  
Alumina Substrate,  
T = 25°C  
A
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
θJA  
T , T  
J stg  
55 to +150  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = –1.0 mA)  
V
–350  
–350  
–5.0  
Vdc  
Vdc  
Vdc  
nA  
C
(BR)CEO  
V
(BR)CBO  
Collector–Base Breakdown Voltage (I = –100 µA)  
C
Emitter–Base Breakdown Voltage (I = –10 µA)  
V
E
(BR)EBO  
Collector Cutoff Current (V  
= –250 V)  
= –4.0 V)  
I
–50  
–50  
CB  
CBO  
Emitter Cutoff Current (V  
EB  
I
nA  
EBO  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996

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