Datasheet > MMBT6472LT1

MMBT6472LT1

更新时间： 2024-11-24 22:36:31

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管达林顿晶体管
页数	文件大小	规格书
5页	201K
描述
Darlington Transistors(NPN Silicon)

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数据手册

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MMBT6472LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Darlington Transistors

NPN Silicon

MMBT6427LT1

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Vdc

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

MMBT6427LT1 = 1V

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

(I _C= 10 mAdc, V _BE= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _CES

—

Vdc

Collector–Base Breakdown Voltage

(I _C= 100 µAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

—

Vdc

Collector Cutoff Current

1.0

µAdc

nAdc

( V _CE= 25Vdc, I _B= 0)

Collector Cutoff Current

I _CBO

( V _CB= 30Vdc, I _E= 0)

Emitter Cutoff Current

I _EBO

( V _EB= 10Vdc, I _C= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

M21–1/5

12 3 4 5

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