Datasheet > MMBT6427LT1_06

MMBT6427LT1_06

更新时间： 2024-09-26 04:39:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
页数	文件大小	规格书
6页	72K
描述
Darlington Transistor NPN Silicon

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBT6427LT1_06 数据手册

MMBT6427LT1

Preferred Device

Darlington Transistor

NPN Silicon

Features

• Pb−Free Package is Available

http://onsemi.com

MAXIMUM RATINGS

COLLECTOR 3

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

BASE

CEO

CBO

EBO

Vdc

EMITTER 2

Collector Current − Continuous

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina Substrate,

SOT−23 (TO−236)

CASE 318

(Note 2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

STYLE 6

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

T , T

−55 to +150

MARKING DIAGRAM

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1V M G

1V = Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBT6427LT1

SOT−23 3,000 / Tape & Reel

MMBT6427LT1G SOT−23 3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 2

MMBT6427LT1/D

12 3 4 5 6

中文翻译

下载PDF

与MMBT6427LT1_06相关器件

型号	品牌	获取价格	描述	数据表
MMBT6427LT1G	ONSEMI	获取价格	Darlington Transistor NPN Silicon
MMBT6427LT1G_09	ONSEMI	获取价格	Darlington Transistor
MMBT6428	MOTOROLA	获取价格	Transistor
MMBT6428	ONSEMI	获取价格	NPN通用放大器
MMBT6428	FAIRCHILD	获取价格	NPN General Purpose Amplifier
MMBT6428	SAMSUNG	获取价格	NPN (AMPLIFIER TRANSISTOR)
MMBT6428L	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236A
MMBT6428LT1	ONSEMI	获取价格	Amplifier Transistors(NPN Silicon)
MMBT6428LT1	MOTOROLA	获取价格	Amplifier Transistors
MMBT6428LT1	DBLECTRO	获取价格	Transistor