Datasheet > MMBT6427LT1G_09

MMBT6427LT1G_09

更新时间： 2024-09-26 05:49:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管达林顿晶体管
页数	文件大小	规格书
6页	159K
描述
Darlington Transistor

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MMBT6427LT1G_09 数据手册

MMBT6427LT1G

Darlington Transistor

NPN Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

COLLECTOR 3

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

BASE

CEO

Vdc

CBO

EMITTER 2

EBO

Vdc

Collector Current − Continuous

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

Derate above 25°C

mW/°C

SOT−23 (TO−236)

CASE 318

Thermal Resistance, Junction−to−Ambient

556

°C/W

STYLE 6

Total Device Dissipation Alumina Substrate,

(Note 2) T = 25°C

300

2.4

mW/°C

Derate above 25°C

MARKING DIAGRAM

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

T , T

−55 to +150

stg

1V M G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

1V = Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBT6427LT1G SOT−23 3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 3

MMBT6427LT1/D

12 3 4 5 6

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