Datasheet > MMBT619

MMBT619

更新时间： 2024-09-25 10:52:27

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	61K
描述
2A , 50V NPN Plastic Encapsulated Transistor

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MMBT619 数据手册

MMBT619

2A , 50V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-23

ꢀ

Low saturation voltage

MARKING

619

Top View

C B

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

7 inch

Millimeter

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

Min.

0.09

0.45

0.08

Max.

0.18

0.60

2.80

2.10

1.20

0.89

1.78

0.30

0.177

0.6 REF.

0.89

1.02

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

350

P_C

Thermal Resistance From Junction To Ambient

Maximum Power Dissipation ¹

R_θJA

357

°C / W

P_CM

625

Thermal Resistance From Junction To Ambient ¹

R_θJA

200

°C / W

°C

Junction, Storage Temperature

Note:

T_J, T_STG

150, -55~150

1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

20-Feb-2012 Rev. A

Page 1 of 2

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