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MMBT589 PDF预览

MMBT589

更新时间: 2024-09-08 04:39:27
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 晶体晶体管
页数 文件大小 规格书
4页 199K
描述
PNP General Purpose Transistor

MMBT589 数据手册

 浏览型号MMBT589的Datasheet PDF文件第2页浏览型号MMBT589的Datasheet PDF文件第3页浏览型号MMBT589的Datasheet PDF文件第4页 
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBT589  
FEATURES  
Pb  
z
Epitaxial planar die construction.  
Lead-free  
z
Also available in lead free version.  
APPLICATIONS  
z
High current surface mount PNP silicon switching transistor  
for load management in portable appilications.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
589  
Package Code  
MMBT589  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
UNIT  
V
collector-base voltage  
-50  
-30  
collector-emitter voltage  
emitter-base voltage  
V
-5  
V
collector current (DC)  
-1.0  
A
PC  
Collector dissipation  
0.31  
403  
W
RθJA  
Thermal Resistance, Junction to Ambient  
junction and storage temperature  
°C/W  
°C  
Tj ,Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Document number: BL/SSSTC118  
Rev.A  
www.galaxycn.com  
1

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