Datasheet > MMBT589

MMBT589

更新时间： 2024-09-15 17:01:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	331K
描述
30V,1A,General Purpose PNP Bipolar Transistor

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MMBT589 数据手册

Product Specification

PNP General Purpose Transistor

MMBT589

FEATURES



Epitaxial planar die construction.



Also available in lead free version.

APPLICATIONS



High current surface mount PNP silicon switching transistor

for load management in portable appilications.

SOT-23

ORDERING INFORMATION

Type No.

Marking

589

Package Code

SOT-23

MMBT589

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol Parameter

Value

UNIT

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

-50

-30

collector-emitter voltage

emitter-base voltage

-5

collector current (DC)

-1.0

I_CM

Collector Current-Peak

-2.0

P_C

Collector dissipation

0.31

R_θJA

T_j,T_stg

Thermal Resistance, Junction to Ambient

junction and storage temperature

403

°C /W

°C

-55 to +150

STM0306A: August 2019

www.gmesemi.com

12 3 4

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