Datasheet > MMBT593

MMBT593

更新时间： 2024-09-25 10:52:27

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	351K
描述
General Purpose Transistor

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MMBT593 数据手册

MMBT593

PNP Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

Collector

Medium Power Transistor

Top View

C B

Base

MARKING

593

Emitter

ABSOLUTE MAXIMUM RATINGS

Millimeter

Min. Max.

Millimeter

Min. Max.

0.10 REF.

0.55 REF.

REF.

Parameter

Symbol Ratings

Unit

2.80

2.25

1.20

0.90

3.00

2.55

1.40

1.15

Collector to Emitter Voltage

Collector to Base Voltage

Emitter to Base Voltage

V_CEO

V_CBO

V_EBO

I_C

-100

-120

-5

0.08

0.15

0.5 REF.

1.80

0.30

2.00

0.50

0.95 TYP.

Collector Current - Continuous

Total Device Dissipation

-1

P_D

250

150,

°C

Junction and Storage Temperature

T_J, T_STG

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector–Emitter Breakdown Voltage

BV_CEO

-100

-120

-5

I_C= -10mA, I_B= 0

I_C= -100μA, I_E= 0

I_E= -100μA, I_C= 0

Collector–Base Breakdown Voltage

BV_CBO

Emitter–Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

BV_EBO

I_CBO

I_CES

-0.1

μA

_CB= -100V, I_E= 0

_CE= -100V, I_E= 0

_EB= -4V, I_C= 0

I_EBO

h_FE(1)*

h_FE(2)*

h_FE(3)*

h_FE(4)*

100

I_C= - 1mA, V_CE= - 5.0V

I_C= - 250mA, V_CE= - 5.0V

I_C= - 0.5A, V_CE= - 5.0V

I_C= - 1 A, V_CE= - 5.0V

DC Current Gain

300

V_CE(sat)*

-0.2

-0.3

I_C= - 250mA, I_B= - 25mA

I_C= - 500mA, I_B= - 50mA

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Base–Emitter Voltage

V_BE(sat)*

V_BE(on)*

f_T

-1.1

-1.0

I_C= - 500mA, I_B= - 50mA

V_CE= -5V, I_C= 1mA

150

Transition Frequency

MHz

V_CE=-10V, I_C=- 50mA, f=100MHz

V_CB= -10V, I_E= 0, f = 1.0MHz

Collector Output Capacitance

C_OB

5.0

*Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2%

01-June-2002 Rev. A

Page 1 of 2

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