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MMBT589LT1 PDF预览

MMBT589LT1

更新时间: 2024-09-24 22:26:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 70K
描述
High Current Surface Mount PNP Silicon Switching Transistor

MMBT589LT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:6 weeks
风险等级:5.33Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):0.31 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMBT589LT1 数据手册

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ON Semiconductort  
High Current Surface Mount  
PNP Silicon Switching Transistor  
for Load Management  
MMBT589LT1  
in Portable Applications  
30 VOLTS  
2.0 AMPS  
PNP TRANSISTOR  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Max  
–30  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
V
CEO  
V
CBO  
V
EBO  
–50  
3
–5.0  
–1.0  
–2.0  
1
Collector Current – Continuous  
Collector Current – Peak  
DEVICE MARKING  
I
C
2
I
CM  
CASE 318–08, STYLE 6  
SOT–23 (TO–236AB)  
MMBT589LT1 = G3  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
(1)  
Max  
Unit  
Total Device Dissipation  
P
D
310  
mW  
T
= 25°C  
A
Derate above 25°C  
2.5  
403  
710  
mW/°C  
°C/W  
mW  
(1)  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
qJA  
(2)  
P
D
T
= 25°C  
A
Derate above 25°C  
5.7  
mW/°C  
°C/W  
mW  
(2)  
Thermal Resistance, Junction to Ambient  
R
176  
qJA  
(3)  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
Dsingle  
575  
Junction and Storage Temperature  
T , T  
J stg  
–55 to +150  
°C  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 X 1.0 inch Pad  
3. ref: Figure 8  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
August, 2001 – Rev. 1  
MMBT589LT1/D  

MMBT589LT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBT589LT1G ONSEMI

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