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MMBT589LT3G PDF预览

MMBT589LT3G

更新时间: 2024-09-25 20:08:19
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
5页 57K
描述
1000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, LEAD FREE, CASE 318-08, TO-236, 3 PIN

MMBT589LT3G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:LEAD FREE, CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.73
最大集电极电流 (IC):1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.31 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMBT589LT3G 数据手册

 浏览型号MMBT589LT3G的Datasheet PDF文件第2页浏览型号MMBT589LT3G的Datasheet PDF文件第3页浏览型号MMBT589LT3G的Datasheet PDF文件第4页浏览型号MMBT589LT3G的Datasheet PDF文件第5页 
MMBT589LT1  
High Current Surface Mount  
PNP Silicon Switching  
Transistor for Load  
Management in  
Portable Applications  
http://onsemi.com  
30 VOLTS, 2.0 AMPS  
PNP TRANSISTORS  
Features  
Pb−Free Packages are Available  
3
MAXIMUM RATINGS (T = 25°C)  
A
1
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
−30  
Unit  
Vdc  
Vdc  
Vdc  
2
V
CEO  
V
CBO  
V
EBO  
−50  
SOT−23 (TO−236)  
CASE 318  
−5.0  
Collector Current − Continuous  
Collector Current − Peak  
I
−1.0  
Adc  
A
C
STYLE 6  
I
−52.0  
CM  
THERMAL CHARACTERISTICS  
MARKING DIAGRAM  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board,  
P
D
(Note 1) T = 25°C  
310  
2.5  
mW  
mW/°C  
A
G3 M G  
Derate above 25°C  
G
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
403  
°C/W  
1
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
710  
5.7  
mW  
mW/°C  
A
Derate above 25°C  
G3 = Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Thermal Resistance, Junction−to−Ambient  
(Note 2)  
R
q
JA  
176  
°C/W  
(Note: Microdot may be in either location)  
Total Device Dissipation (Ref. Figure 8)  
(Single Pulse < 10 sec.)  
P
Dsingle  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
575  
mW  
Junction and Storage Temperature  
T , T  
−55 to +150  
°C  
J
stg  
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Device  
Package  
Shipping  
MMBT589LT1  
SOT−23 3,000 / Tape & Reel  
1. FR4 @ Minimum Pad  
2. FR4 @ 1.0 X 1.0 inch Pad  
MMBT589LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
MMBT589LT3  
SOT−23 10,000/Tape & Reel  
MMBT589LT3G  
SOT−23 10,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 2  
MMBT589LT1/D  
 

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