Datasheet > MMBT589

MMBT589

更新时间： 2024-09-15 14:55:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	671K
描述
SOT-23

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MMBT589 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

MMBT589 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

MMBT589 TRANSISTOR (PNP)

FEATURES

High current surface mount PNP silicon switching transistor for

Load management in portable applications

1. BASE

2. EMITTER

3. COLLECTOR

MARKING :589

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-50

Unit

Collector-Emitter Voltage

-30

Emitter-Base Voltage

-5

Collector Current -Continuous

Collector Power Dissipation

-1

P_C

310

403

-55-150

℃/W

℃

R_θJA

Thermal Resistance, junction to Ambient

Operation Junction and Storage Temperature Range

T_J,T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-50

-30

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-100μA,I_C=0

I_CBO

I_CES

V_CB=-30V,I_E=0

-0.1

μA

Collector-emitter cut-off current

Emitter cut-off current

V_CES=-30V

I_EBO

V_EB=-4V,I_C=0

h_FE1

V_CE=-2V,I_C=-1mA

V_CE=-2V,I_C=-500mA

V_CE=-2V,I_C=-1A

V_CE=-2V,I_C=-2A

I_C= -500mA, I_B=-50mA

I_C= -1A, I_B=-100mA

I_C= -2A, I_B=-200mA

I_C= -1A, I_B=-100mA

V_CE=-2V, I_C=-1A

100

h_FE2

300

DC current gain

h_FE3

h_FE4

V_CE(sat)1

V_CE(sat)2

V_CE(sat)3

V_BE(sat)

V_BE(on)

-0.25

-0.3

Collector-emitter saturation voltage

-0.65

-1.2

Base-emitter saturation voltage

Base-emitter Turn-on voltage

-1.1

_CE=-5V, I_C=-100mA ,

Transition frequency

f_T

100

MHz

f =100MHz

f=1MHz

Collector Output Capacitance

Cob

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

下载PDF

与MMBT589相关器件

型号	品牌	获取价格	描述	数据表
MMBT589LT1	ONSEMI	获取价格	High Current Surface Mount PNP Silicon Switching Transistor
MMBT589LT1	MOTOROLA	获取价格	High Current Surface Mount PNP Silicon Switching Transistor
MMBT589LT1_07	ONSEMI	获取价格	High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portabl
MMBT589LT1G	ONSEMI	获取价格	High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portabl
MMBT589LT1G_09	ONSEMI	获取价格	High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portabl
MMBT589LT3G	ONSEMI	获取价格	1000mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, LEAD FREE, CASE 318-08, TO-236, 3
MMBT591	SECOS	获取价格	General Purpose Transistor
MMBT5910	NSC	获取价格	TRANSISTOR,BJT,PNP,20V V(BR)CEO,TO-236
MMBT591A	SEMTECH	获取价格	PNP Silicon Epitaxial Planar Transistor
MMBT591A	SWST	获取价格	小信号晶体管