Datasheet > MMBT5401LT1

MMBT5401LT1

更新时间： 2024-09-26 10:52:27

品牌	Logo	应用领域
TGS		晶体晶体管光电二极管局域网
页数	文件大小	规格书
3页	36K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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MMBT5401LT1 数据手册

TIGER ELECTRONIC CO.,LTD

MMBT5401LT1

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The MMBT5401LT1 is designed for general purpose applications

requiring high breakdown voltages.

Features

• High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)

• Complements to NPN Type MMBT5551LT1.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature.............................................................................................. -55~+150 °C

Junction Temperature ..................................................................................... +150°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 160 V

VCEO Collector to Emitter Voltage .................................................................................... 150 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current......................................................................................................... 500mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

hFE1

Min.

160

150

100

Typ.

Max.

Unit

Test Conditions

IC=100uA

IC=1mA

IE=10uA

VCB=120V

200

500

240

300

IC=10mA, IB=1mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCE=5V, IC=1mA

VCE=5V, IC=10mA

VCE=5V, IC=50mA

VCE=10V, IC=10mA, f=100MHz

VCB=10V, f=1MHZ

hFE2

hFE3

Cob

MHz

TIGER ELECTRONIC CO.,LTD

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