5秒后页面跳转
MMBT5401LT1 PDF预览

MMBT5401LT1

更新时间: 2024-11-05 10:52:27
品牌 Logo 应用领域
TGS 晶体晶体管光电二极管局域网
页数 文件大小 规格书
3页 36K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

MMBT5401LT1 数据手册

 浏览型号MMBT5401LT1的Datasheet PDF文件第2页浏览型号MMBT5401LT1的Datasheet PDF文件第3页 
TIGER ELECTRONIC CO.,LTD  
MMBT5401LT1  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The MMBT5401LT1 is designed for general purpose applications  
requiring high breakdown voltages.  
Features  
High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)  
Complements to NPN Type MMBT5551LT1.  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature.............................................................................................. -55~+150 °C  
Junction Temperature ..................................................................................... +150°C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage ....................................................................................... 160 V  
VCEO Collector to Emitter Voltage .................................................................................... 150 V  
VEBO Emitter to Base Voltage .............................................................................................. 5 V  
IC Collector Current......................................................................................................... 500mA  
(Ta=25°C)  
Characteristics  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
VCE(sat)1  
VCE(sat)2  
VBE(sat)1  
VBE(sat)2  
hFE1  
Min.  
160  
150  
5
-
-
-
-
-
50  
60  
50  
100  
-
Typ.  
Max.  
Unit  
V
V
Test Conditions  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC=100uA  
IC=1mA  
V
IE=10uA  
VCB=120V  
50  
200  
500  
1
1
-
240  
-
300  
6
nA  
mV  
mV  
V
IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
VCE=5V, IC=1mA  
VCE=5V, IC=10mA  
VCE=5V, IC=50mA  
VCE=10V, IC=10mA, f=100MHz  
VCB=10V, f=1MHZ  
V
hFE2  
hFE3  
fT  
Cob  
MHz  
pF  
TIGER ELECTRONIC CO.,LTD  

与MMBT5401LT1相关器件

型号 品牌 获取价格 描述 数据表
MMBT5401LT1G ONSEMI

获取价格

High Voltage Transistor(PNP Silicon)
MMBT5401LT3 ONSEMI

获取价格

High Voltage Transistor(PNP Silicon)
MMBT5401LT3G ONSEMI

获取价格

High Voltage Transistor(PNP Silicon)
MMBT5401L-X-AE3-R UTC

获取价格

HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5401M3T5G ONSEMI

获取价格

150 V,60 mA,低饱和压,PNP 晶体管,SOT-723
MMBT5401Q DIODES

获取价格

PNP, 150V, 0.6A, SOT23
MMBT5401Q YANGJIE

获取价格

SOT-23
MMBT5401S62Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SO-3
MMBT5401T FOSHAN

获取价格

SOT-89
MMBT5401-T1 SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23