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MMBT5401LT1 PDF预览

MMBT5401LT1

更新时间: 2024-11-20 04:39:27
品牌 Logo 应用领域
AVICTEK 晶体晶体管光电二极管
页数 文件大小 规格书
1页 41K
描述
SOT-23 Plastic-Encapsulate Transistors

MMBT5401LT1 数据手册

  
@vic  
SOT-23 Plastic-Encapsulate Transistors  
MMBT5401LT1 TRANSISTOR (PNP)  
FEATURES  
SOT-23  
1. BASE  
2. EMITTER  
3. COLLECTOR  
-
Power dissipation  
2. 4  
1. 3  
PCM:  
0.3  
W (Tamb=25)  
Collector current  
ICM:  
-0.6  
A
V
Collector-base voltage  
V(BR)CBO  
:
-160  
Operating and storage junction temperature range  
Unit: mm  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
MAX  
UNIT  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-160  
-150  
-5  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic= -100 µA, IE=0  
Ic= -1 mA, IB=0  
V
IE= -10µA, IC=0  
VCB=-120V, IE=0  
-0.1  
-0.1  
µA  
µA  
IEBO  
VEB=-4V, IC=0  
Emitter cut-off current  
HFE(1)  
VCE= -5V, IC= -1mA  
VCE= -5V, IC=-10mA  
VCE= -5V, IC=-50mA  
IC=-50mA, IB= -5mA  
IC= -50mA, IB= -5mA  
80  
100  
50  
DC current gain  
HFE(2)  
200  
HFE(3)  
VCE(sat)  
VBE(sat)  
-0.5  
-1  
V
V
Collector-emitter saturation voltage  
Base-emitter  
voltage  
saturation  
V
CE= -5V, IC= -10mA  
100  
MHz  
Transition frequency  
fT  
f=30MHz  
DEVICE MARKING  
MMBT5401LT1=2L  

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