MMBT2222AM3T5G
NPN General Purpose
Transistor
The MMBT2222AM3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
amplifier applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
http://onsemi.com
Features
COLLECTOR
3
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol Value
Unit
Vdc
V
CEO
V
CBO
40
75
Vdc
V
6.0
600
Vdc
EBO
MARKING
DIAGRAM
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
I
C
mAdc
3
SOT−723
CASE 631AA
STYLE 1
AA M
Symbol
Max
Unit
2
Total Device Dissipation
P
D
mW
1
265
2.1
FR−5 Board (Note 1)
AA
M
= Specific Device Code
= Date Code
mW/°C
T = 25°C
A
Derate above 25°C
Thermal Resistance,
R
q
JA
470
°C/W
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T = 25°C
Derate above 25°C
P
640
5.1
mW
mW/°C
°C/W
D
ORDERING INFORMATION
A
†
Device
Package
Shipping
Thermal Resistance,
Junction−to−Ambient
R
q
195
JA
MMBT2222AM3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature
T , T
−55 to
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009 − Rev. 0
MMBT2222AM3/D