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MMBT2222A-TP-HF PDF预览

MMBT2222A-TP-HF

更新时间: 2024-11-10 13:11:39
品牌 Logo 应用领域
美微科 - MCC 晶体放大器晶体管开关光电二极管IOT
页数 文件大小 规格书
4页 220K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBT2222A-TP-HF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.03
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):285 ns
最大开启时间(吨):35 nsBase Number Matches:1

MMBT2222A-TP-HF 数据手册

 浏览型号MMBT2222A-TP-HF的Datasheet PDF文件第2页浏览型号MMBT2222A-TP-HF的Datasheet PDF文件第3页浏览型号MMBT2222A-TP-HF的Datasheet PDF文件第4页 
M C C  
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20736 Marilla Street Chatsworth  
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TM  
MMBT2222A  
Micro Commercial Components  
Features  
Surface Mount SOT-23 Package  
Capable of 350mWatts of Power Dissipation, IC=600mA  
NPN General  
Purpose Amplifier  
x
Operating and Storage Junction Temperature: -55°C to +150°C  
Thermal resistance,Junction to Ambient:500oC/W  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Marking:1P  
Lead Free Finish/RoHS Compliant("P"Suffix designates Compliant)  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
SOT-23  
A
Symbol  
Parameter  
Min  
Max  
Units  
D
OFF CHARACTERISTICS  
C
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICEX  
Collector-Emitter Breakdown Voltage*  
(IC=10mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=10µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10µAdc, IC=0)  
Collector Cutoff Current  
40  
75  
Vdc  
Vdc  
B
C
E
B
6.0  
Vdc  
F
E
10  
nAdc  
(VCE=60Vdc, VBE=3.0Vdc)  
ON CHARACTERISTICS  
H
G
J
hFE  
DC Current Gain*  
(IC=0.1mAdc, VCE=10Vdc)  
(IC=1.0mAdc, VCE=10Vdc)  
(IC=10mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=1.0Vdc)  
(IC=500mAdc, VCE=10Vdc)  
Collector-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
35  
50  
75  
100  
50  
40  
K
DIMENSIONS  
MM  
300  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
VCE(sat)  
0.3  
1.0  
Vdc  
Vdc  
F
VBE(sat)  
G
H
J
0.6  
1.2  
2.0  
.085  
.37  
K
SMALL-SIGNAL CHARACTERISTICS  
Suggested Solder  
Pad Layout  
fT  
Current Gain-Bandwidth Product  
(IC=20mAdc, VCE=20Vdc, f=100MHz)  
300  
MHz  
pF  
Cobo  
Cibo  
NF  
Output Capacitance  
(VCB=10Vdec, IE=0, f=1.0MHz)  
Input Capacitance  
(VBE=0.5Vdc, IC=0, f=1.0MHz)  
Noise Figure  
.031  
.800  
8.0  
25  
.035  
.900  
pF  
.079  
2.000  
inches  
mm  
4.0  
dB  
(IC=100µAdc, VCE=10Vdc, RS=1.0kΩ  
f=1.0kHz)  
SWITCHING CHARACTERISTICS  
td  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(VCC=30Vdc, VBE=0.5Vdc  
IC=150mAdc, IB1=15mAdc)  
(VCC=30Vdc, IC=150mAdc  
IB1=IB2=15mAdc)  
10  
25  
225  
60  
ns  
ns  
ns  
ns  
.037  
.950  
tr  
ts  
tf  
.037  
.950  
*Pulse Width 300µs, Duty Cycle2.0%  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

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