Datasheet > MMBT2222AWT1_10

MMBT2222AWT1_10

更新时间： 2024-11-18 10:52:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	116K
描述
General Purpose Transistor

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MMBT2222AWT1_10 数据手册

MMBT2222AWT1

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−323/SC−70 package which

is designed for low power surface mount applications.

http://onsemi.com

Features

COLLECTOR

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

BASE

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

EMITTER

Vdc

6.0

Vdc

Collector Current − Continuous

600

mAdc

SC−70

CASE 419

STYLE 3

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

150

T = 25°C

Thermal Resistance, Junction−to−Ambient

833

°C/W

°C

MARKING DIAGRAM

Junction and Storage Temperature

T , T

−55 to +150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

P1 M G

P1 = Specific Device Code

M = Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBT2222AWT1G

SC−70 3000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

October, 2010 − Rev. 5

MMBT2222AWT1/D

12 3 4 5 6

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