5秒后页面跳转
MMBT2222LT1G PDF预览

MMBT2222LT1G

更新时间: 2024-11-18 04:25:15
品牌 Logo 应用领域
上华 - COMCHIP 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
6页 86K
描述
General Purpose Transistors NPN Silicon

MMBT2222LT1G 数据手册

 浏览型号MMBT2222LT1G的Datasheet PDF文件第2页浏览型号MMBT2222LT1G的Datasheet PDF文件第3页浏览型号MMBT2222LT1G的Datasheet PDF文件第4页浏览型号MMBT2222LT1G的Datasheet PDF文件第5页浏览型号MMBT2222LT1G的Datasheet PDF文件第6页 
MMBT2222LT1,  
MMBT2222ALT1  
MMBT2222ALT1 is a Preferred Device  
General Purpose Transistors  
NPN Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
BASE  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MMBT2222LT1  
30  
40  
MMBT2222ALT1  
2
EMITTER  
CollectorBase Voltage  
EmitterBase Voltage  
Vdc  
Vdc  
MMBT2222LT1  
MMBT2222ALT1  
60  
75  
3
MMBT2222LT1  
MMBT2222ALT1  
5.0  
6.0  
1
Collector Current − Continuous  
I
600  
mAdc  
C
2
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
SOT−23  
CASE 318  
STYLE 6  
Total Device Dissipation FR5 Board  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
556  
°C/W  
Total Device Dissipation Alumina  
P
MARKING DIAGRAM  
D
Substrate (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
417  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range T , T  
−55 to +150  
xxx M G  
J
stg  
G
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1
xxx = 1P or M1B  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 6  
MMBT2222LT1/D  
 

与MMBT2222LT1G相关器件

型号 品牌 获取价格 描述 数据表
MMBT2222LT1G_09 ONSEMI

获取价格

General Purpose Transistors
MMBT2222LT3 COMCHIP

获取价格

General Purpose Transistors NPN Silicon
MMBT2222LT3 ONSEMI

获取价格

General Purpose Transistors
MMBT2222LT3G COMCHIP

获取价格

General Purpose Transistors NPN Silicon
MMBT2222LT3G ONSEMI

获取价格

General Purpose Transistors
MMBT2222Q SECOS

获取价格

General Purpose Transistor
MMBT2222W SEMTECH

获取价格

NPN Silicon Epitaxial Planar Medium Power Transistor
MMBT2222W SWST

获取价格

小信号晶体管
MMBT2222W-AH SWST

获取价格

小信号晶体管
MMBT2369 TI

获取价格

15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB