Datasheet > MMBT2369_08

MMBT2369_08

更新时间： 2024-02-06 23:23:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管
页数	文件大小	规格书
5页	127K
描述
NPN Switching Transistor

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MMBT2369_08 数据手册

February 2008

MMBT2369 / PN2369

NPN Switching Transistor

•

This device is designed for high speed saturated switching at

collector currents of 10mA to 100mA.

•

Sourced from process 21.

MMBT2369

PN2369

SOT-23

TO-92

Mark: 1J

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings *

T = 25×C unless otherwise noted

Symbol

Parameter

Ratings

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

4.5

- Continuous

200

°C

I_CP

**Collector Current (Pulse)

Operating and Storage Junction Temperature Range

400

T_J, T_STG

-55 ~ 150

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

T = 25°C unless otherwise noted

Symbol

Parameter

Max.

Units

P_D

Total Device Dissipation

Derate above 25°C

350

2.8

mW/°C

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

125

357

°C/W

* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.

MMBT2369 / PN2369 Rev. 1.0.0

www.fairchildsemi.com

12 3 4 5

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