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MMBT2222LT3G PDF预览

MMBT2222LT3G

更新时间: 2024-01-21 01:08:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
7页 122K
描述
General Purpose Transistors

MMBT2222LT3G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.14最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):75JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

MMBT2222LT3G 数据手册

 浏览型号MMBT2222LT3G的Datasheet PDF文件第2页浏览型号MMBT2222LT3G的Datasheet PDF文件第3页浏览型号MMBT2222LT3G的Datasheet PDF文件第4页浏览型号MMBT2222LT3G的Datasheet PDF文件第5页浏览型号MMBT2222LT3G的Datasheet PDF文件第6页浏览型号MMBT2222LT3G的Datasheet PDF文件第7页 
MMBT2222LT1G,  
MMBT2222ALT1G  
General Purpose Transistors  
NPN Silicon  
http://onsemi.com  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
COLLECTOR  
3
Compliant  
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
Unit  
BASE  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
2
MMBT2222LT1G  
30  
40  
EMITTER  
MMBT2222ALT1G  
CollectorBase Voltage  
Vdc  
Vdc  
MMBT2222LT1G  
MMBT2222ALT1G  
60  
75  
3
EmitterBase Voltage  
1
MMBT2222LT1G  
MMBT2222ALT1G  
5.0  
6.0  
2
SOT23  
CASE 318  
STYLE 6  
Collector Current Continuous  
Collector Current Peak (Note 3)  
I
600  
mAdc  
mAdc  
C
I
1100  
CM  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Total Device Dissipation FR5 Board  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
xxx M G  
G
Thermal Resistance, JunctiontoAmbient  
R
556  
°C/W  
q
JA  
1
Total Device Dissipation Alumina  
P
D
Substrate (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
xxx = 1P or M1B  
Derate above 25°C  
M
= Date Code*  
G
= PbFree Package  
Thermal Resistance, JunctiontoAmbient  
R
417  
°C/W  
°C  
q
JA  
(Note: Microdot may be in either location)  
Junction and Storage Temperature Range T , T  
55 to +150  
J
stg  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
3. Reference SOA curve.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2009 Rev. 9  
MMBT2222LT1/D  
 

MMBT2222LT3G 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2222LT1G ONSEMI

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