Datasheet > MMBT2369A

MMBT2369A

更新时间： 2023-12-06 20:03:41

品牌	Logo	应用领域
先科 - SWST		光电二极管晶体管
页数	文件大小	规格书
5页	351K
描述
小信号晶体管

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中文翻译

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数据手册

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MMBT2369A 数据手册

MMBT2369 / MMBT2369A

NPN Silicon Epitaxial Planar Transistor

Features

• High speed swithing

1.Base 2. Emitter 3. Collector

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Collector Base Voltage

Symbol

V_CBO

V_CEO

V_CES

V_EBO

I_C

Value

Unit

Collector Emitter Voltage

Emitter Base Voltage

4.5

Collector Current Continuous

Total Device Dissipation

200

P_tot

225

Junction and Storage Temperature Range

T_J,T_Stg

-55 to +150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

556

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 PCB with minimum recommended pad layout.

1 / 5

Dated: 13/04/2022 Rev: 04

12 3 4 5

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与MMBT2369A相关器件

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MMBT2369A/S62Z	TI	获取价格	200mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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MMBT2369ALT1G	ONSEMI	获取价格	Switching Transistors NPN Silicon
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