Datasheet > MMBT2369A

MMBT2369A

更新时间： 2023-12-06 20:02:03

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1040K
描述
双极型晶体管

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技术参数
数据手册

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MMBT2369A 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	15
Collector Current - Continuous：	0.2	DC current gain - Min：	#
DC current gain - Max：	120	Transition frequency：	-
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

MMBT2369A 数据手册

MMBT2369A

NPN General Purpose Amplifier

FEATURES

Epitaxial planar die construction.

SOT-23

Min

Dim

Max

3.10

1.50

Ultra-small surface mount package.

2.70

1.10

1.0 Typical

0.4 Typical

APPLICATIONS

0.35

0.48

2.00

0.1

Use as a medium power amplifier.

1.80

0.02

0.1 Typical

2.20

2.60

All Dimensions in mm

ORDERING INFORMATION

Type No.

Marking

1JA

Package Code

SOT-23

MMBT2369A

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

4.5

Collector Current -Continuous

Collector Dissipation

200

P_C

300

Thermal resistance,junction to ambient

Junction and Storage Temperature

R_θJA

T_j,T_stg

417

℃/W

-55 to +150

℃

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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