Datasheet > MMBT2369A

MMBT2369A

更新时间： 2024-06-27 12:14:13

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	543K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBT2369A 数据手册

MMBT2369A

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Epitaxial planar die construction

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

4.5

Collector Current

Collector Power Dissipation

200

°C/W

°C

300

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

556

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =10uA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

，

V(BR)CEO

V(BR)EBO

I_CBO

I =10mA I =0

，

4.5

I_E=10uA，I_C=0

0.4

uA V_CB=20V, I_E=0

V_CE=1V, I_C=10mA

120

V_CE=0.35V, I_C=10mA,T_A=55℃

V_CE=0.4V, I_C=30mA

V_CE=1V, I_C=100mA

DC current gain

h_FE

0.25

0.3

I_C=10mA，V_CE=1V

I_C=10mA,V_CE=0.35V,T_A=125℃

I_C=30mA，V_CE=0.4V

I_C=100mA，V_CE=1V

I_C=10mA,I_B=1mA

I_C=10mA,I_B=1mA,T_A=55℃

I_C=10mA,I_B=1mA,T_A=125℃

I_C=30mA,I_B=3mA

Collector-emitter saturation voltage

V_CE(sat)

0.25

0.5

0.85

1.02

0.7

Base-emitter saturation voltage

V_BE(sat)

0.59

1.15

1.60

4.0

I_C=100mA,I_B=10mA

V_CE=5V, I_E=0, f=1

MHz

Collector output capacitance

Storage Time

C_ob

t_S

ns I_B1=I_B2=I_C=10mA

V_CC=3V, I_C=10mA,I_B1=3mA

Turn-On Time

t_ON

V_CC=3V, I_C=10mA,

I_B1=3mA,I_B2=1.5mA

Turn-Off Time

t_OFF

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