Datasheet > MMBT2222FW

MMBT2222FW

更新时间： 2024-10-01 12:20:19

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
5页	268K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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MMBT2222FW 数据手册

MMBT2222FW

NPN Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

FEATURES

Epitaxial Planar Die Construction

SOT-523

Min

Complementary PNP Type Available

(MMBT2907FW)

Dim

Max

1.500 1.700

0.780 0.820

0.800 0.820

0.280 0.320

0.900 1.100

0.000 0.100

0.100 0.200

0.350 0.410

0.490 0.510

1.500 1.700

0.280 0.320

Ideal for Medium Power Amplification and

Switching

Top View

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

MMBT2222FW

Unit

Vdc

All Dimension in mm

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

600

mAdc

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

150

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

Derate above 25°C

T = 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBT2222FW = 1P

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = 10 mAdc, I = 0)

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage (I = 10 Adc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage (I = 10 Adc, I = 0)

(BR)EBO

5.0

Collector Cutoff Current (V

= 60 Vdc, V

= 3.0 Vdc)

—

nAdc

EB(off)

CEX

= 60 Vdc, I = 0)

0.01

µAdc

CBO

= 60 Vdc, I = 0, T = 125°C)

—

Emitter Cutoff Current (V

= 3.0 Vdc, I = 0)

EBO

—

100

nAdc

Base Cutoff Current (V

= 60 Vdc, V

= 3.0 Vdc)

EB(off)

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 5

12 3 4 5

中文翻译

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