5秒后页面跳转
MMBT2222LT1 PDF预览

MMBT2222LT1

更新时间: 2024-11-18 07:17:15
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管
页数 文件大小 规格书
6页 476K
描述
General Purpose Transistors NPN Silicon

MMBT2222LT1 数据手册

 浏览型号MMBT2222LT1的Datasheet PDF文件第2页浏览型号MMBT2222LT1的Datasheet PDF文件第3页浏览型号MMBT2222LT1的Datasheet PDF文件第4页浏览型号MMBT2222LT1的Datasheet PDF文件第5页浏览型号MMBT2222LT1的Datasheet PDF文件第6页 
WILLAS  
GeneralPurposeTransistors  
NPN Silicon  
MMBT2222LT1  
M MBT2222ALT1  
RoHS product for packing code suffix "G",  
Halogen free product for packing code suffix "H"  
.
Weight : 0.008g  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
2222  
30  
2222A  
40  
Unit  
Vdc  
SOT– 23  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
60  
75  
Vdc  
5.0  
600  
6.0  
Vdc  
3
COLLECTOR  
600  
mAdc  
1
THERMAL CHARACTERISTICS  
Characteristic  
BASE  
Symbol  
Max  
Unit  
2
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
PD  
225  
mW  
EMITTER  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
RθJA  
PD  
ORDERING INFORMATION  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
Device  
Marking  
M1B  
Shipping  
2.4  
417  
mW/°C  
°C/W  
°C  
M MBT2222LT1  
M MBT2222ALT1  
3000/Tape & Reel  
3000/Tape & Reel  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
1P  
TJ , Tstg  
–55 to +150  
DEVICE MARKING  
M MBT2222LT1= M1B ; MMBT2222ALT1= 1P  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I C = 10 mAdc, I B = 0)  
M MBT2222  
V(BR)CEO  
30  
40  
Vdc  
M MBT2222A  
––  
Collector–Base Breakdown Voltage  
(I C = 10 µAdc, I E = 0)  
Emitter–Base Breakdown Voltage  
(I E = 10 µAdc, I C = 0)  
M MBT2222  
M MBT2222A  
M MBT2222  
M MBT2222A  
M MBT2222A  
V
60  
75  
Vdc  
Vdc  
(BR)CBO  
V
5.0  
6.0  
––  
10  
(BR)EBO  
CEX  
Collector Cutoff Current  
I
nAdc  
µAdc  
( V CE = 60 Vdc, I EB(off) = 3.0Vdc)  
Collector Cutoff Current  
I CBO  
(V CB = 50 Vdc, I E = 0)  
M MBT2222  
M MBT2222A  
M MBT2222  
M MBT2222A  
––  
––  
––  
––  
0.01  
0.01  
10  
(V CB = 60 Vdc, I E = 0)  
(V CB = 50 Vdc, I E = 0, T A = 125°C)  
(V CB = 60 Vdc, I E = 0, T A = 125°C)  
Emitter Cutoff Current  
10  
(V EB = 3.0 Vdc, I C = 0)  
M MBT2222A  
M MBT2222A  
I EBO  
I BL  
100  
20  
nAdc  
nAdc  
Base Cutoff Current  
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

与MMBT2222LT1相关器件

型号 品牌 获取价格 描述 数据表
MMBT2222LT1/D ONSEMI

获取价格

General Purpose Transistors NPN Silicon
MMBT2222LT1_01 ONSEMI

获取价格

General Purpose Transistors NPN Silicon
MMBT2222LT1_06 COMCHIP

获取价格

General Purpose Transistors NPN Silicon
MMBT2222LT1D ONSEMI

获取价格

General Purpose Transistors NPN Silicon
MMBT2222LT1G COMCHIP

获取价格

General Purpose Transistors NPN Silicon
MMBT2222LT1G ONSEMI

获取价格

General Purpose Transistors
MMBT2222LT1G_09 ONSEMI

获取价格

General Purpose Transistors
MMBT2222LT3 COMCHIP

获取价格

General Purpose Transistors NPN Silicon
MMBT2222LT3 ONSEMI

获取价格

General Purpose Transistors
MMBT2222LT3G COMCHIP

获取价格

General Purpose Transistors NPN Silicon