Datasheet > MMBT2222LT1

MMBT2222LT1

更新时间： 2024-11-18 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	158K
描述
SOT-23 TRANSISTOR

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数据手册

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MMBT2222LT1 数据手册

RoHS

M M B T 2 2 2 2 L T 1

SOT-23 TRANSISTOR

Description

Dimensions(Unit:mm)

SOT-23

Medium Power Amplifier.

NPN Silicon Transistor.

2.3±0.2

1.3±0.2

0.5Ref.

hFE RANK

Features

Large collector current:ICmax=600mA

Low collector saturation voltage

enabling low voltage operation

Complementary pair with .

Type Name

0.38Ref.

MINO.1

0.01-0.10

1.EMITTER

2.BASE

3.COLLECTOR

Tolerance:0.1mm

(Ta=25^oC)

Absolute Maximum Ratings

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

VCBO

VCEO

MMBT2222S

Collector-Emitter

Voltage

MMBT2222AS

VEBO

Emitter-Base Voltage

Collector Current

^OC

600

150

-50~150

Collector Dissipation

Junction Temperature

Storage Temperature

^OC

Tstg

(Ta=25^oC)

Electrical Characteristics

Parameter

Symbol

MIN. TYP.MAX. Unit

Condition

IC=10mA

Collector-Emitter

MMBT2222S

BVCEO

MMBT2222AS

Breakdown Voltage

BVCBO

BVEBO

ICBO

IC=10 A

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

IE=10 A

VCB=60V

hFE

DC Current Gain

VCE=10V, IC=10mA

WEJ ELECTRONIC CO.,LTD

Collector-Emitter Saturation Voltage

Current Gain-Bandwidth Product

Collector Output Capacitance

VCE(sat)

0.4

IC=150mA, IB=15mA

250

VCE=20V, IC=20mA,f=100MHz

VCB=10V, IE=0 ,f=1MHz

MHz

Cob

6.0

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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