Datasheet > MMBT2222AWT1

MMBT2222AWT1

更新时间： 2024-09-20 11:59:31

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
3页	295K
描述
General Purpose Transistors

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MMBT2222AWT1 数据手册

WILLAS

General Purpose Transistors

MMBT2222AWT1

NPN Silicon

These transistors are designed for general

purpose amplifier applications. They are

housed in the SOT–323/SC–70 package which

is designed for low power surface mount

COLLECTOR

applications.

BASE

We declare that the material of product

compliance with RoHS requirements.

Pb-Free package is available

EMITTER

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

SOT–323

MAXIMUM RATINGS

Rating

Symbol

V _CEO

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

V _CBO

Vdc

6.0

Vdc

EBO

I _C

600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

150

833

Unit

Total Device Dissipation FR– 5 Board,

T_A= 25°C

P_D

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

R_θJA

°C/W

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

M MBT2222AWT1 = P1

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

(I _C= 1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BL

6.0

—

Vdc

Collector–Base Breakdown Voltage

(I _C= 10 µAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

Vdc

Base Cutoff Current

nAdc

(V _CE= 60 Vdc, V _EB= 3.0 Vdc)

Collector Cutoff Current

I _CEX

—

(V = 60 Vdc, V = 3.0 Vdc)

1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%.

2012-11

WILLAS ELECTRONIC CORP.

12 3

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