5秒后页面跳转
MMBT2222ATT3G PDF预览

MMBT2222ATT3G

更新时间: 2024-11-09 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 放大器光电二极管小信号双极晶体管
页数 文件大小 规格书
6页 110K
描述
NPN Bipolar Junction Transistor

MMBT2222ATT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-75包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:1.52最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):285 ns
最大开启时间(吨):35 nsBase Number Matches:1

MMBT2222ATT3G 数据手册

 浏览型号MMBT2222ATT3G的Datasheet PDF文件第2页浏览型号MMBT2222ATT3G的Datasheet PDF文件第3页浏览型号MMBT2222ATT3G的Datasheet PDF文件第4页浏览型号MMBT2222ATT3G的Datasheet PDF文件第5页浏览型号MMBT2222ATT3G的Datasheet PDF文件第6页 
MMBT2222ATT1  
General Purpose Transistor  
NPN Silicon  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT416/SC75 package which  
is designed for low power surface mount applications.  
http://onsemi.com  
Features  
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
BASE  
2
MAXIMUM RATINGS (T = 25°C)  
A
EMITTER  
Rating  
Symbol  
Max  
40  
Unit  
Vdc  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
V
CEO  
V
CBO  
V
EBO  
75  
Vdc  
3
CASE 463  
6.0  
600  
Vdc  
SOT416/SC75  
2
STYLE 1  
Collector Current Continuous  
I
C
mAdc  
1
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation (Note 1)  
T = 25°C  
A
P
D
150  
mW  
MARKING DIAGRAM  
Thermal Resistance,  
JunctiontoAmbient  
R
833  
°C/W  
°C  
q
JA  
1P M G  
Operating and Storage Junction  
Temperature Range  
T , T  
J
55 to +150  
stg  
G
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
recommended footprint.  
1
1P  
M
G
= Specific Device Code  
= Date Code  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT2222ATT1G SOT416 3000 / Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 Rev. 4  
MMBT2222ATT1/D  
 

MMBT2222ATT3G 替代型号

型号 品牌 替代类型 描述 数据表
PMST2222A,115 NXP

功能相似

PMST2222; PMST2222A - NPN switching transistors SC-70 3-Pin
MMBT2222ATT1G ONSEMI

功能相似

General Purpose Transistor
MMBT2222AT-TP MCC

功能相似

NPN General Purpose Amplifier

与MMBT2222ATT3G相关器件

型号 品牌 获取价格 描述 数据表
MMBT2222ATTD ONSEMI

获取价格

General Purpose Transistor
MMBT2222AT-TP MCC

获取价格

NPN General Purpose Amplifier
MMBT2222AT-TP-HF MCC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
MMBT2222AW SEMTECH

获取价格

NPN Silicon Epitaxial Planar Medium Power Transistor
MMBT2222AW WEITRON

获取价格

NPN General Purpose Transistors
MMBT2222AW PANJIT

获取价格

NPN GENERAL PURPOSE SWITCHING TRANSISTOR
MMBT2222AW SECOS

获取价格

NPN Silicon General Purpose Transistor
MMBT2222AW TYSEMI

获取价格

General purpose transistor
MMBT2222AW KEXIN

获取价格

General Purpose Transistor
MMBT2222AW SWST

获取价格

小信号晶体管