Datasheet > MMBT2222ATTD

MMBT2222ATTD

更新时间： 2024-11-08 04:39:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	114K
描述
General Purpose Transistor

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数据手册

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MMBT2222ATTD 数据手册

MMBT2222ATT1

Preferred Device

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−416/SC−75 package which

is designed for low power surface mount applications.

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

Unit

Vdc

BASE

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

EBO

Vdc

EMITTER

6.0

600

Vdc

Collector Current − Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 1)

T = 25°C

150

Thermal Resistance,

Junction−to−Ambient

833

°C/W

°C

CASE 463

SOT−416/SC−75

STYLE 1

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

1P M

recommended footprint.

= Specific Device Code

= Date Code

ORDERING INFORMATION

†

Device

Package

Shipping

MMBT2222ATT1 SOT−416 3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

September, 2004 − Rev. 2

MMBT2222ATT1/D

12 3 4 5 6

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