Datasheet > MMBT2222AWT1

MMBT2222AWT1

更新时间： 2024-11-17 22:54:43

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
2页	67K
描述
Preliminary Information General Purpose Transistors

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技术参数
数据手册

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MMBT2222AWT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.23
Is Samacsys：	N	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.15 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	300 MHz
Base Number Matches：	1

MMBT2222AWT1 数据手册

LESHAN RADIO COMPANY, LTD.

Preliminary Information

General Purpose Transistors

NPN Silicon

MMBT2222AWT1

These transistors are designed for general

purpose amplifier applications. They are

housed in the SOT–323/SC–70 package which

COLLECTOR

is designed for low power surface mount

BASE

applications.

CASE 419–02, STYLE 3

EMITTER

SOT–323 /SC – 70

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Vdc

6.0

Vdc

600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

150

833

Unit

Total Device Dissipation FR– 5 Board,

T_A= 25°C

P_D

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

R_θJA

°C/W

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

MMBT2222AWT1 = 1P

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

(I _C= 1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BL

6.0

—

Vdc

Collector–Base Breakdown Voltage

(I _C= 10 µAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

Vdc

Base Cutoff Current

nAdc

(V _CE= 60 Vdc, V _EB= 3.0 Vdc)

Collector Cutoff Current

I _CEX

—

(V = 60 Vdc, V = 3.0 Vdc)

1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%.

K1–1/2

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