Datasheet > MMBT2222ATT1

MMBT2222ATT1

更新时间： 2024-11-08 11:59:31

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	353K
描述
General Purpose Transistor

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MMBT2222ATT1 数据手册

WILLAS

MMBT2222ATT1

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−523 package which

is designed for low power surface mount applications.

Features

SOT-523

compliance with RoHS requirements.

• ^{We declare that the material of product}

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

COLLECTOR

ORDERING INFORMATION

BASE

hipping

Device

Maring

M MBT2222ATT1

3000 / Tape & Reel

EMITTER

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

Unit

Vdc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

EBO

Vdc

MARKING DIAGRAM

6.0

600

Vdc

Collector Current − Continuous

mAdc

1P M G

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 1)

150

T = 25°C

= Specific Device Code

= Date Code

= Pb−Free Package

Thermal Resistance,

Junction−to−Ambient

833

°C/W

°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

stg

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector−Emitter Breakdown Voltage (Note 1)

6.0

−

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = 1.0 mAdc, I = 0)

Collector−Base Breakdown Voltage

(I = 10 mAdc, I = 0)

−

Emitter−Base Breakdown Voltage

(I = 10 mAdc, I = 0)

−

Vdc

Base Cutoff Current

(V = 60 Vdc, V = 3.0 Vdc)

100

nAdc

Collector Cutoff Current

(V = 60 Vdc, V = 3.0 Vdc)

−

CEX

2012-11

WILLAS ELECTRONIC CORP.

12 3

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