5秒后页面跳转
MMBT2222ATT1 PDF预览

MMBT2222ATT1

更新时间: 2024-11-18 04:39:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 114K
描述
General Purpose Transistor

MMBT2222ATT1 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:SC-75包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.14
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

MMBT2222ATT1 数据手册

 浏览型号MMBT2222ATT1的Datasheet PDF文件第2页浏览型号MMBT2222ATT1的Datasheet PDF文件第3页浏览型号MMBT2222ATT1的Datasheet PDF文件第4页浏览型号MMBT2222ATT1的Datasheet PDF文件第5页浏览型号MMBT2222ATT1的Datasheet PDF文件第6页 
MMBT2222ATT1  
Preferred Device  
General Purpose Transistor  
NPN Silicon  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT−416/SC−75 package which  
is designed for low power surface mount applications.  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C)  
A
1
Rating  
Symbol  
Max  
40  
Unit  
Vdc  
BASE  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
CBO  
V
EBO  
75  
Vdc  
2
EMITTER  
6.0  
600  
Vdc  
Collector Current − Continuous  
I
C
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
3
Symbol  
Max  
Unit  
2
1
Total Device Dissipation (Note 1)  
T = 25°C  
A
P
D
150  
mW  
Thermal Resistance,  
Junction−to−Ambient  
R
833  
°C/W  
°C  
CASE 463  
SOT−416/SC−75  
STYLE 1  
θ
JA  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to  
+150  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MARKING DIAGRAM  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
1P M  
recommended footprint.  
1
1P  
M
= Specific Device Code  
= Date Code  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT2222ATT1 SOT−416 3000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 2  
MMBT2222ATT1/D  
 

MMBT2222ATT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2222ATT1G ONSEMI

完全替代

General Purpose Transistor
MMBT2222ALT1G ONSEMI

功能相似

General Purpose Transistors

与MMBT2222ATT1相关器件

型号 品牌 获取价格 描述 数据表
MMBT2222ATT1_10 ONSEMI

获取价格

General Purpose Transistor
MMBT2222ATT1G ONSEMI

获取价格

General Purpose Transistor
MMBT2222ATT3G ONSEMI

获取价格

NPN Bipolar Junction Transistor
MMBT2222ATTD ONSEMI

获取价格

General Purpose Transistor
MMBT2222AT-TP MCC

获取价格

NPN General Purpose Amplifier
MMBT2222AT-TP-HF MCC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
MMBT2222AW SEMTECH

获取价格

NPN Silicon Epitaxial Planar Medium Power Transistor
MMBT2222AW WEITRON

获取价格

NPN General Purpose Transistors
MMBT2222AW PANJIT

获取价格

NPN GENERAL PURPOSE SWITCHING TRANSISTOR
MMBT2222AW SECOS

获取价格

NPN Silicon General Purpose Transistor