Datasheet > MMBT2222ATT1_10

MMBT2222ATT1_10

更新时间： 2024-11-10 10:52:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	110K
描述
General Purpose Transistor

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MMBT2222ATT1_10 数据手册

MMBT2222ATT1

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−416/SC−75 package which

is designed for low power surface mount applications.

http://onsemi.com

Features

COLLECTOR

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

BASE

MAXIMUM RATINGS (T = 25°C)

EMITTER

Rating

Symbol

Max

Unit

Vdc

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

EBO

Vdc

CASE 463

6.0

600

Vdc

SOT−416/SC−75

STYLE 1

Collector Current − Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 1)

T = 25°C

150

MARKING DIAGRAM

Thermal Resistance,

Junction−to−Ambient

833

°C/W

°C

1P M G

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

= Specific Device Code

= Date Code

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

MMBT2222ATT1G SOT−416 3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

October, 2010 − Rev. 4

MMBT2222ATT1/D

12 3 4 5 6

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