5秒后页面跳转
MMBT2222AWT1 PDF预览

MMBT2222AWT1

更新时间: 2024-11-17 22:54:43
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管
页数 文件大小 规格书
4页 76K
描述
General Purpose Transistor

MMBT2222AWT1 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.04
Is Samacsys:N最大集电极电流 (IC):0.6 A
基于收集器的最大容量:8 pF集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:0.15 W
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
VCEsat-Max:1 VBase Number Matches:1

MMBT2222AWT1 数据手册

 浏览型号MMBT2222AWT1的Datasheet PDF文件第2页浏览型号MMBT2222AWT1的Datasheet PDF文件第3页浏览型号MMBT2222AWT1的Datasheet PDF文件第4页 
Order this document  
by MMBT2222AWT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
NPN Silicon  
These transistors are designed for general purpose amplifier applica-  
tions. They are housed in the SOT–323/SC–70 package which is  
designed for low power surface mount applications.  
COLLECTOR  
3
3
1
1
BASE  
2
2
CASE 41902, STYLE 3  
SOT323/SC70  
EMITTER  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
75  
Vdc  
EmitterBase Voltage  
6.0  
Vdc  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
600  
mAdc  
C
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
P
D
150  
mW  
T
= 25°C  
A
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
833  
°C/W  
°C  
JA  
T , T  
J stg  
55 to +150  
MMBT2222AWT1 = 1P  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
V
40  
75  
6.0  
20  
10  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Base Cutoff Current  
(V = 60 Vdc, V  
I
nAdc  
nAdc  
BL  
= 3.0 Vdc)  
= 3.0 Vdc)  
EB  
CE  
Collector Cutoff Current  
(V = 60 Vdc, V  
EB  
I
CEX  
CE  
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
Thermal Clad is a registered trademark of the Berquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997

MMBT2222AWT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBT2222AWT1G ONSEMI

功能相似

General Purpose Transistor
MMST2222A-7-F DIODES

功能相似

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

与MMBT2222AWT1相关器件

型号 品牌 获取价格 描述 数据表
MMBT2222AWT1_10 ONSEMI

获取价格

General Purpose Transistor
MMBT2222AWT1G ONSEMI

获取价格

General Purpose Transistor
MMBT2222AWT3G ONSEMI

获取价格

NPN 双极晶体管
MMBT2222D87Z TI

获取价格

NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2222E SWST

获取价格

小信号晶体管
MMBT2222FW SECOS

获取价格

General Purpose Transistor
MMBT2222-HIGH TI

获取价格

30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AA
MMBT2222L ONSEMI

获取价格

General Purpose Transistors
MMBT2222LT1 LRC

获取价格

General Purpose Transistors(NPN Silicon)
MMBT2222LT1 WILLAS

获取价格

General Purpose Transistors NPN Silicon