5秒后页面跳转
MMBT2222AT PDF预览

MMBT2222AT

更新时间: 2024-01-31 13:35:17
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 59K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT2222AT 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.74
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):285 ns
最大开启时间(吨):35 nsBase Number Matches:1

MMBT2222AT 数据手册

 浏览型号MMBT2222AT的Datasheet PDF文件第2页浏览型号MMBT2222AT的Datasheet PDF文件第3页 
MMBT2222AT  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
Epitaxial Planar Die Construction  
Complementary PNP Type Available  
(MMBT2907AT)  
SOT-523  
Dim Min Max Typ  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
A
C
·
Ultra-Small Surface Mount Package  
Mechanical Data  
C
B
TOP VIEW  
¾
¾
0.50  
·
·
·
·
Case: SOT-523, Molded Plastic  
Case material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking (See Page 2): 1P  
Ordering & Date Code Information, See Page 2  
Weight: 0.002 grams (approx.)  
B
E
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
G
H
K
J
M
K
L
N
·
·
·
·
L
D
M
N
a
C
0°  
8°  
¾
All Dimensions in mm  
E
B
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
MMBT2222AT  
Unit  
V
Collector-Base Voltage  
75  
40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Power Dissipation (Note 1)  
600  
mA  
mW  
°C/W  
°C  
Pd  
150  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
833  
Tj, TSTG  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30268 Rev. 2 - 2  
1 of 3  
MMBT2222AT  

与MMBT2222AT相关器件

型号 品牌 描述 获取价格 数据表
MMBT2222AT/R NXP TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI

获取价格

MMBT2222AT_1 DIODES NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

获取价格

MMBT2222AT_10 WEITRON Plastic-Encapsulate Transistors NPN Silicon

获取价格

MMBT2222AT_11 MCC NPN General Purpose Amplifier

获取价格

MMBT2222AT_15 WINNERJOIN NPN TRANSISTOR

获取价格

MMBT2222AT_2 DIODES NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

获取价格