Datasheet > MMBT2222AT_11

MMBT2222AT_11

更新时间： 2022-11-22 11:12:19

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
3页	220K
描述
NPN General Purpose Amplifier

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中文翻译

获取价格

数据手册

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MMBT2222AT_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT2222AT

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

NPN General

Purpose Amplifier

xꢀ Capable of 150mWatts of Power Dissipation

xꢀ Operating and Storage Junction Temperatures -55ć to 150ć

xꢀ Collector Current: 0.6A

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking:1P

SOT-523

Electrical Characteristics @ 25qC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage*

(I_C=10mAdc, I_B=0)

Vdc

Collector-Base Breakdown Voltage

(I_C=10PAdc, I_E=0)

Emitter-Base Breakdown Voltage

6.0

Vdc

(I_E=10PAdc, I_C=0)

Collector Cut-off Current

(V_CB=70Vdc, I_E=0)

100

nAdc

I_CEO

Collector Cutoff Current

(V_CE=35Vdc, I_B=0)

I_EBO

Emitter Cut-off Current

(V_EB=3Vdc, I_C=0)

ON CHARACTERISTICS

h_FE

DIMENSIONS

INCHES

DC Current Gain*

(I_C=0.1mAdc, V_CE=10Vdc)

(I_C=1.0mAdc, V_CE=10Vdc)

(I_C=10mAdc, V_CE=10Vdc)

(I_C=150mAdc, V_CE=10Vdc)

(I_C=500mAdc, V_CE=10Vdc)

Collector-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

100

DIM

MIN

.059

.030

.057

MAX

.067

.033

.069

MIN

1.50

0.75

1.45

0.50Nominal

0.90

.000

.70

.100

.25

MAX

1.70

0.85

1.75

NOTE

300

.020 Nominal

.035

.043

.004

.031

.008

.014

1.10

V_CE(sat)

.000

.028

.004

.010

.100

0.80

.200

.35

0.3

1.0

Vdc

V_BE(sat)

1.2

2.0

SMALL-SIGNAL CHARACTERISTICS

f_T

Current Gain-Bandwidth Product

(I_C=20mAdc, V_CE=20Vdc, f=100MHz)

Output Capacitance

(V_CB=10Vdec, I_E=0, f=100kHz)

300

MHz

C_obo

8.0

SWITCHING CHARACTERISTICS

t_d

Delay Time

(V_CC=30Vdc, V_BE=0.5Vdc

I_C=150mAdc, I_B1=15mAdc)

t_r

Rise Time

t_s

Storage Time

(V_CC=30Vdc, I_C=150mAdc

I_B1=I_B2=15mAdc)

225

t_f

Fall Time

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Revision: A

1 of 3

2011/01/01

12 3

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