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MMBT2222AT_11 PDF预览

MMBT2222AT_11

更新时间: 2024-11-10 10:52:43
品牌 Logo 应用领域
美微科 - MCC 放大器
页数 文件大小 规格书
3页 220K
描述
NPN General Purpose Amplifier

MMBT2222AT_11 数据手册

 浏览型号MMBT2222AT_11的Datasheet PDF文件第2页浏览型号MMBT2222AT_11的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MMBT2222AT  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
NPN General  
Purpose Amplifier  
xꢀ Capable of 150mWatts of Power Dissipation  
xꢀ Operating and Storage Junction Temperatures -55ć to 150ć  
xꢀ Collector Current: 0.6A  
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Marking:1P  
·
x
SOT-523  
Electrical Characteristics @ 25qC Unless Otherwise Specified  
A
Symbol  
Parameter  
Min  
Max  
Units  
D
OFF CHARACTERISTICS  
C
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage*  
(IC=10mAdc, IB=0)  
40  
75  
Vdc  
Vdc  
C
B
Collector-Base Breakdown Voltage  
(IC=10PAdc, IE=0)  
Emitter-Base Breakdown Voltage  
6.0  
Vdc  
E
B
(IE=10PAdc, IC=0)  
Collector Cut-off Current  
(VCB=70Vdc, IE=0)  
E
100  
100  
100  
nAdc  
nAdc  
nAdc  
ICEO  
Collector Cutoff Current  
(VCE=35Vdc, IB=0)  
H
G
J
IEBO  
Emitter Cut-off Current  
(VEB=3Vdc, IC=0)  
K
ON CHARACTERISTICS  
hFE  
DIMENSIONS  
INCHES  
DC Current Gain*  
(IC=0.1mAdc, VCE=10Vdc)  
(IC=1.0mAdc, VCE=10Vdc)  
(IC=10mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=10Vdc)  
(IC=150mAdc, VCE=10Vdc)  
(IC=500mAdc, VCE=10Vdc)  
Collector-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
35  
50  
75  
100  
50  
40  
MM  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
.059  
.030  
.057  
MAX  
.067  
.033  
.069  
MIN  
1.50  
0.75  
1.45  
0.50Nominal  
0.90  
.000  
.70  
.100  
.25  
MAX  
1.70  
0.85  
1.75  
NOTE  
300  
.020 Nominal  
.035  
.043  
.004  
.031  
.008  
.014  
1.10  
VCE(sat)  
.000  
.028  
.004  
.010  
.100  
0.80  
.200  
.35  
0.3  
1.0  
Vdc  
Vdc  
VBE(sat)  
1.2  
2.0  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Current Gain-Bandwidth Product  
(IC=20mAdc, VCE=20Vdc, f=100MHz)  
Output Capacitance  
(VCB=10Vdec, IE=0, f=100kHz)  
300  
MHz  
pF  
Cobo  
8.0  
SWITCHING CHARACTERISTICS  
td  
Delay Time  
(VCC=30Vdc, VBE=0.5Vdc  
IC=150mAdc, IB1=15mAdc)  
10  
25  
ns  
ns  
ns  
tr  
Rise Time  
ts  
Storage Time  
(VCC=30Vdc, IC=150mAdc  
IB1=IB2=15mAdc)  
225  
tf  
Fall Time  
60  
ns  
www.mccsemi.com  
Revision: A  
1 of 3  
2011/01/01  

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