Datasheet > MMBT2222AT_10

MMBT2222AT_10

更新时间： 2024-11-18 10:52:43

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
6页	419K
描述
Plastic-Encapsulate Transistors NPN Silicon

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中文翻译

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数据手册

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MMBT2222AT_10 数据手册

MMBT2222AT

COLLECTOR

Plastic-Encapsulate Transistors

NPN Silicon

BASE

P b

Lead(Pb)-Free

SC-89

(SOT-523F)

EMITTER

MAXIMUM RATINGS

Value

Unit

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Vdc

CEO

Vdc

CBO

6.0

Emitter-Base Voltage

Vdc

EBO

Collector Current-Continuous

600

mAdc

THERMAL CHARACTERISTICS

Symbol

Characteristics

Unit

Max

Total Device Dissipation FR-5 Board ⁽¹⁾

TA=25 C

150

833

Thermal Resistance, Junction to Ambient

Junction and Storage,Temperature

C/W

-55 to +150

J,Tstg

DEVICE MARKING

MMBT2222AT=1P

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Unit

Max

Min

OFF CHARACTERISTICS

(2)

Collector-Emitter Breakdown Voltage (I = 10 mAdc, I =0)

(BR)CEO

Collector-Base Breakdown Voltage (I = 10 µAdc, I =0)

(BR)CBO

Emitter-Base Breakdown Voltage (I = -10 µAdc, I =0)

(BR)EBO

6.0

(V = 60 Vdc, V = 3.0 V)

Base Cutoff Current

Collector Cutoff Current (V = 60 Vdc, V = 3.0 V)

CE EB

CEX

100

WEITRON

http://www.weitron.com.tw

1/6

28-Apr-2010

12 3 4 5 6

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