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MMBT2222AT PDF预览

MMBT2222AT

更新时间: 2024-01-10 12:42:32
品牌 Logo 应用领域
WEITRON 晶体晶体管开关光电二极管
页数 文件大小 规格书
5页 95K
描述
Plastic-Encapsulate Transistors NPN Silicon

MMBT2222AT 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.74
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):285 ns
最大开启时间(吨):35 nsBase Number Matches:1

MMBT2222AT 数据手册

 浏览型号MMBT2222AT的Datasheet PDF文件第2页浏览型号MMBT2222AT的Datasheet PDF文件第3页浏览型号MMBT2222AT的Datasheet PDF文件第4页浏览型号MMBT2222AT的Datasheet PDF文件第5页 
MMBT2222AT  
COLLECTOR  
3
Plastic-Encapsulate Transistors  
NPN Silicon  
3
1
1
2
BASE  
SOT-523(SC-75)  
2
EMITTER  
MAXIMUM RATINGS  
Value  
40  
75  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
V
CEO  
V
CBO  
V
6.0  
Emitter-Base Voltage  
Vdc  
EBO  
I
Collector Current-Continuous  
600  
mAdc  
C
THERMAL CHARACTERISTICS  
Symbol  
Characteristics  
Unit  
Max  
Total Device Dissipation FR-5 Board (1)  
TA=25 C  
mW  
P
D
150  
833  
R
θ
JA  
Thermal Resistance, Junction to Ambient  
Junction and Storage,Temperature  
C/W  
C
-55 to +150  
T
J,Tstg  
DEVICE MARKING  
MMBT2222AT=1P  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Unit  
Max  
Min  
OFF CHARACTERISTICS  
-
(2)  
V
V
Collector-Emitter Breakdown Voltage (I = 10 mAdc, I =0)  
Vdc  
Vdc  
Vdc  
40  
75  
(BR)CEO  
C
B
Collector-Base Breakdown Voltage (I = 10 µAdc, I =0)  
-
-
C
E
(BR)CBO  
Emitter-Base Breakdown Voltage (I = -10 µAdc, I =0)  
E
C
V
(BR)EBO  
6.0  
-
(V = 70 Vdc, I =0)  
CB  
E
Collector Cutoff Current  
I
CBO  
0.1  
0.1  
nAdc  
nAdc  
(V = 3 Vdc, I =0)  
I
Emitter Cutoff Current EB  
-
C
EBO  
1.FR-5=1.0 x 0.75 x 0.062 in  
<_  
2. Pulse Test:Pulse Width=300 us, Duty Cycle 2.0%  
WEITRON  
http://www.weitron.com.tw  

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