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MMBT2222AT PDF预览

MMBT2222AT

更新时间: 2024-11-19 17:00:51
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 438K
描述
40V,0.6A,General Purpose NPN Bipolar Transistor

MMBT2222AT 数据手册

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NPN Silicon Epitaxial Planar Transistor  
MMBT2222AT  
Features  
Epitaxial planar die construction  
Complimentary to MMBT2907AT  
Ultra-small surface mount package  
Mechanic al Data  
Case: SOT-523  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-523  
Ordering Information  
Part Number  
Package  
SOT-523  
Shipping Quantity  
Marking Code  
MMBT2222AT  
3000 pcs / Tape & Reel  
1P  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Continuous Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
75  
40  
V
6
V
0.6  
1.5  
0.15  
0.2  
A
Peak Collector Current (pulse width ≤ 40μs, δ = 0.35)  
Continuous Base Current  
ICM  
A
IB  
A
Peak Base Current  
IBM  
A
Thermal Characteristics  
Parameter  
Power Dissipation *1  
Symbol  
PD  
Value  
0.15  
Unit  
W
Thermal Resistance Junction-to-Air *1  
Thermal Resistance Junction-to-Air *2  
Thermal Resistance Junction-to-Case *2  
Thermal Resistance Junction-to-Lead *2  
Ambient Temperature  
RθJA  
RθJA  
RθJC  
RθJL  
TA  
833  
°C/W  
°C/W  
°C/W  
°C/W  
°C  
125  
70  
50  
-55 ~ +150  
-55 ~ +150  
-55 ~ +150  
Operating Junction Temperature  
Storage Temperature Range  
TJ  
°C  
TSTG  
°C  
STM0404A: October 2023 [2.1]  
www.gmesemi.com  
1

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