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MMBT2222AT PDF预览

MMBT2222AT

更新时间: 2024-01-04 11:09:02
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 140K
描述
TRANSISTOR (NPN)

MMBT2222AT 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknown风险等级:5.74
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):285 ns
最大开启时间(吨):35 nsBase Number Matches:1

MMBT2222AT 数据手册

 浏览型号MMBT2222AT的Datasheet PDF文件第2页 
RoHS  
MMBT2222AT  
MMBT2222AT TRANSISTOR (NPN)  
SOT-523  
1. BASE  
FEATURES  
Power dissipation  
2. EMITTER  
3. COLLECTOR  
PCM:  
0.15  
W (Tamb=25)  
Collector current  
ICM:  
Collector-base voltage  
0.6  
75  
A
V
V(BR)CBO  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
MAX  
UNIT  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
75  
40  
6
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic= 10µA, IE=0  
Ic= 10mA, IB=0  
V
IE=10µA, IC=0  
VCB=70V, IE=0  
0. 1  
0. 1  
0. 1  
µA  
µA  
µA  
ICEO  
VCE=35V, IB=0  
Collector cut-off current  
IEBO  
VEB= 3V, IC=0  
Emitter cut-off current  
hFE(1)  
VCE=10V, IC= 0.1mA  
VCE=10V, IC= 1mA  
VCE=10V, IC= 10mA  
VCE=10V, IC= 150mA  
VCE=10V, IC= 500mA  
IC=150 mA, IB= 15mA  
IC=500 mA, IB= 50mA  
IC=150 mA, IB=15mA  
IC=500 mA, IB= 50mA  
35  
50  
hFE(2)  
DC current gain  
hFE(3)  
75  
hFE(4)  
100  
40  
hFE(5)  
VCE(sat)1  
0.3  
1
V
V
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CE(sat)2  
VBE(sat)1  
VBE(sat)2  
1.2  
2
VCE=20V, IC= 20mA  
f=100MHz  
300  
MHz  
pF  
Transition frequency  
Output Capacitance  
fT  
VCB=10V, IE= 0  
f=1MHz  
8
Cob  
10  
25  
nS  
nS  
Delay time  
Rise time  
td  
tr  
VCC=30V, IC=150mA  
VBE(off)=0.5V, IB1=15mA  
WEJ ELECTRONIC CO.,LTD  
225  
nS  
Storage time  
tS  
VCC=30V, IC=150mA  
60  
nS  
Fall time  
tf  
IB1= IB2= 15mA  
Marking  
:1P  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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