Datasheet > MMBT2222AT

MMBT2222AT

更新时间： 2024-09-19 10:52:43

品牌	Logo	应用领域
SECOS		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	813K
描述
NPN Silicon General Purpose Transistors

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技术参数
数据手册

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MMBT2222AT 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.21	Base Number Matches：	1

MMBT2222AT 数据手册

MMBT2222AT

NPN Silicon

General Purpose Transistors

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-523

ꢀ

Epitaxial Planar Die Construction

Complementary PNP Type Available(MMBT2907FW)

Ideal for Medium Power Amplification and Switching

MARKING CODE

PACKAGE INFORMATION

Package

MPQ

Leader Size

Millimeter

REF.

Min.

1.50

0.75

0.60

0.23

Max.

1.70

0.95

0.80

0.33

Min.

Max.

SOT-523

7 inch

0.30

---

0.50

1.50

1.70

0.50BSC

0.10

0.20

Collector

Base

Emitter

MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Ratings

Unit

Collector - Base Voltage

Emitter - Base Voltage

°C / W

°C

Collector Current - Continuous

Total Device Dissipation FR-4 Board @ T_A=25°C ¹

Thermal Resistance, Junction to Ambient

600

P_D

150

R_θJA

833

Junction & Storage Temperature

Note:

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.

T_J, T_STG

-55~150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

17-Aug-2011 Rev. A

Page 1 of 5

12 3 4 5

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