MJD44H11

更新时间： 2024-10-31 22:15:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管开关光电二极管
页数	文件大小	规格书
6页	195K
描述
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

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技术参数
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MJD44H11 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G2
Reach Compliance Code：	unknown	HTS代码：	8541.29.00.75
风险等级：	5.09	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	8 A	集电极-发射极最大电压：	80 V
配置：	SINGLE	最小直流电流增益 (hFE)：	40
JESD-30 代码：	R-PDSO-G2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	功耗环境最大值：	20 W
最大功率耗散 (Abs)：	20 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	50 MHz
最大关闭时间（toff）：	640 ns	VCEsat-Max：	1 V
Base Number Matches：	1

MJD44H11 数据手册

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by MJD44H11/D

SEMICONDUCTOR TECHNICAL DATA

DPAK For Surface Mount Applications

*Motorola Preferred Device

. . . for general purpose power and switching such as output or driver stages in

applications such as switching regulators, converters, and power amplifiers.

SILICON

POWER TRANSISTORS

8 AMPERES

•

Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

Straight Lead Version in Plastic Sleeves (“–1” Suffix)

Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix)

Electrically Similar to Popular D44H/D45H Series

80 VOLTS

20 WATTS

Low Collector Emitter Saturation Voltage — V

Fast Switching Speeds

= 1.0 Volt Max @ 8.0 Amperes

CE(sat)

Complementary Pairs Simplifies Designs

MAXIMUM RATINGS

CASE 369A–13

Rating

Symbol

D44H11 or D45H11

Unit

Vdc

Adc

Collector–Emitter Voltage

Emitter–Base Voltage

CEO

Collector Current — Continuous

Peak

Total Power Dissipation

CASE 369–07

@ T = 25 C

0.16

Watts

W/ C

Derate above 25 C

Total Power Dissipation (1)

@ T = 25 C

1.75

0.014

Watts

W/ C

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

Derate above 25 C

Operating and Storage Junction

Temperature Range

T , T

–55 to 150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

6.25

71.4

260

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient (1)

Lead Temperature for Soldering

θJC

θJA

(1) These ratings are applicable when surface mounted on the minimum pad size recommended.

inches

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

中文翻译

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MJD44H11 替代型号

型号	品牌	替代类型	描述	数据表
MJD44H11TM	FAIRCHILD	功能相似	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/
MJD44H11T4-A	STMICROELECTRONICS	功能相似	Complementary power transistors
MJD44H11T4	STMICROELECTRONICS	功能相似	Complementary power transistors

与MJD44H11相关器件

型号	品牌	获取价格	描述	数据表
MJD44H11_03	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON PNP TRANSISTORS
MJD44H11_06	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11_09	STMICROELECTRONICS	获取价格	Complementary power transistors
MJD44H11_09	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
MJD44H11_11	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11-001	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD44H11-001G	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
MJD44H11-1G	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11A	NEXPERIA	获取价格	80 V, 8 A NPN high power bipolar transistorProduction

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