Datasheet > MJD44H11IP

MJD44H11IP

更新时间： 2024-11-02 18:06:23

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
2页	329K
描述
Package / Case : TO-251;Mounting Style : Through Hole;Power Rating : 20 W;Transistor Polarity : NPN;VCEO : 80 V;VEBO : 5 V;Max Collector Current : 8.0 A;DC Current Gain hFE Max : 350;Certified (AEC-Q101...etc) : AEC-Q101

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MJD44H11IP 数据手册

MJD44H11

Marking code MJD44H11

Silicon NPN POWER triode

1 base 2 collector 3 emitter

encapsulation mode TO-251/TO-252

Ouline example

Designed for general purpose power and switching

Device

Devic

ꢀ

ackage

TO252

TO251

MJD44H11

MJD44H11IP

Maximum ratings(Ta=25 unless otherwise noted)

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

Symbol

VCEO

VEBO

Value

Unit

Collector Power Dissipation

Junction Temperatuye

P^C

Storage Temperatuye

Tstg

Electrical Characteristics (Ta=25 unless otherwise noted)

Parameter

Symbol

Test Condition

IC=30A IB=0

Min

Max

Unit

Collector Emitter Sustaining Voltage VCEO(sus)

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

VEBO

ICES

IE=100uA IC=0

VCE=80V VBE=0

VCE=5V IB=0

IEBO

Collector-Emitter Saturation Voltage VCE(sat) IC=5A IB=0.5A

1.5

Collector-Base Saturation Voltage

DC Current Gain

VBE(sat) IC=5A IB=0.5A

HFE

f^T

VCE=5V IC=1A

VCE=5V IC=1A f=3MHz

350

transition frequency

MHz

2023-12/17

REV:D

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