生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.75 |
风险等级: | 5.1 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PDSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 20 W | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | 最大关闭时间(toff): | 640 ns |
VCEsat-Max: | 1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJD44H11T4-A | STMICROELECTRONICS |
获取价格 |
Complementary power transistors | |
MJD44H11T4G | ONSEMI |
获取价格 |
SILICON POWER TRANSISTORS | |
MJD44H11T5 | ONSEMI |
获取价格 |
SILICON POWER TRANSISTORS | |
MJD44H11T5G | ONSEMI |
获取价格 |
Complementary Power Transistors | |
MJD44H11TF | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
MJD44H11TF | ONSEMI |
获取价格 |
8 A,80 V,NPN 双极功率晶体管 | |
MJD44H11TM | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/ | |
MJD44H11TM | ONSEMI |
获取价格 |
8 A,80 V,NPN 双极功率晶体管 | |
MJD45H11 | KEXIN |
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Complementary Power Transistors | |
MJD45H11 | TYSEMI |
获取价格 |
Lead Formed for Surface Mount Applications in Plastic Sleeves |