Datasheet > MJD44H11_09

MJD44H11_09

更新时间： 2024-11-01 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	118K
描述
NPN Epitaxial Silicon Transistor

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MJD44H11_09 数据手册

March 2009

MJD44H11

NPN Epitaxial Silicon Transistor

•

General Purpose Power and Switching Such as Output or Driver Stages in Applications

D-PAK for Surface Mount Applications

Load Formed for Surface Mount Application (No Suffix)

Straight Lead (I-PAK, "- I" Suffix)

Electrically Similar to Popular MJE44H

Fast Switching Speeds

Low Collector Emitter Saturation Voltage

D-PAK

I-PAK

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol Parameter

Value

Units

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector-Current (Pulse)

Junction Temperature

Storage Temperature

I_CP

T_J

150

°C

T_STG

- 65 ~ 150

Thermal Characteristics T_a= 25°C unless otherwise noted

Symbol Parameter

Max.

Units

T_c= 25°C

T_a= 25°C

Total Device Dissipation

P_D

1.75

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

6.25

71.4

°C/W

MJD44H11 Rev. B1

www.fairchildsemi.com

12 3 4 5

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