Datasheet > MJD44H11_06

MJD44H11_06

更新时间： 2024-09-13 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	76K
描述
Complementary Power Transistors

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MJD44H11_06 数据手册

MJD44H11 (NPN)

MJD45H11 (PNP)

Preferred Device

Complementary Power

Transistors

DPAK For Surface Mount Applications

http://onsemi.com

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

SILICON

POWER TRANSISTORS

8 AMPERES

Features

• Lead Formed for Surface Mount Application in Plastic Sleeves

(No Suffix)

80 VOLTS, 20 WATTS

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

MARKING

DIAGRAMS

• Electrically Similar to Popular D44H/D45H Series

• Low Collector Emitter Saturation Voltage −

YWW

xH11G

CE(sat)

= 1.0 Volt Max @ 8.0 Amperes

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

DPAK

CASE 369C

STYLE 1

• Pb−Free Packages are Available

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Emitter−Base Voltage

Symbol

Max

Unit

Vdc

Adc

YWW

xH11G

CEO

Collector Current − Continuous

− Peak

DPAK−3

CASE 369D

STYLE 1

Total Power Dissipation

@ T = 25°C

0.16

Derate above 25°C

W/°C

Total Power Dissipation (Note 1)

Year

1.75

0.014

@ T = 25°C

Work Week

Device Code

x = 4 or 5

W/°C

°C

Derate above 25°C

J4xH11

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

stg

Pb−Free Package

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

6.25

71.4

Unit

°C/W

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

(Note 1)

Lead Temperature for Soldering

260

°C

Preferred devices are recommended choices for future use

and best overall value.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 7

MJD44H11/D

12 3 4 5 6 7

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与MJD44H11_06相关器件

型号	品牌	获取价格	描述	数据表
MJD44H11_09	STMICROELECTRONICS	获取价格	Complementary power transistors
MJD44H11_09	FAIRCHILD	获取价格	NPN Epitaxial Silicon Transistor
MJD44H11_11	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11-001	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD44H11-001G	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
MJD44H11-1G	ONSEMI	获取价格	Complementary Power Transistors
MJD44H11A	NEXPERIA	获取价格	80 V, 8 A NPN high power bipolar transistorProduction
MJD44H11G	ONSEMI	获取价格	SILICON POWER TRANSISTORS
MJD44H11IP	RECTRON	获取价格	Package / Case : TO-251;Mounting Style : Through Hole;Power Rating : 20 W;Transistor Polar

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