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MJD44H11_11

更新时间： 2024-11-01 10:55:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 108K
描述
Complementary Power Transistors

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MJD44H11_11 数据手册

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MJD44H11 (NPN)  
MJD45H11 (PNP)  
Complementary Power  
Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
SILICON  
POWER TRANSISTORS  
8 AMPERES  
Features  
• Lead Formed for Surface Mount Application in Plastic Sleeves  
(No Suffix)  
80 VOLTS, 20 WATTS  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
MARKING  
DIAGRAMS  
• Electrically Similar to Popular D44H/D45H Series  
• Low Collector Emitter Saturation Voltage −  
4
AYWW  
J4  
xH11G  
V
CE(sat)  
= 1.0 Volt Max @ 8.0 Amperes  
• Fast Switching Speeds  
2
1
• Complementary Pairs Simplifies Designs  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
3
DPAK  
CASE 369C  
STYLE 1  
4
• These are Pb−Free Packages  
AYWW  
J4  
xH11G  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Max  
80  
5
Unit  
Vdc  
Vdc  
Adc  
1
V
CEO  
2
3
DPAK−3  
CASE 369D  
STYLE 1  
V
EB  
Collector Current − Continuous  
− Peak  
I
C
8
16  
Total Power Dissipation  
P
W
D
D
A
Y
WW  
J4xH11  
G
=
=
=
=
Assembly Location  
Year  
Work Week  
Device Code  
x = 4 or 5  
@ T = 25°C  
20  
C
Derate above 25°C  
0.16  
W/°C  
Total Power Dissipation (Note 1)  
P
W
1.75  
0.014  
@ T = 25°C  
A
W/°C  
°C  
Derate above 25°C  
=
Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
R
q
JC  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
Lead Temperature for Soldering  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 − Rev. 10  
MJD44H11/D  
 
12345678

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