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MGSF1N03LT3

更新时间： 2024-11-20 21:54:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 78K
描述
Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23

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MGSF1N03LT3 数据手册

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MGSF1N03LT1  
Preferred Device  
Power MOSFET  
30 V, 2.1 A, Single N−Channel, SOT−23  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are dc−dc converters and power management in portable  
and battery−powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
http://onsemi.com  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
• Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
80 mW @ 10 V  
• Miniature SOT−23 Surface Mount Package Saves Board Space  
• Pb−Free Package is Available  
30 V  
2.1 A  
125 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
N−Channel  
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
V
30  
±20  
2.1  
D
DSS  
Gate−to−Source Voltage  
V
V
GS  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
State  
I
D
A
A
T = 85°C  
A
1.5  
G
t ≤ 10 s T = 25°C  
2.8  
A
Power Dissipation  
(Note 1)  
Steady T = 25°C  
State  
P
0.73  
W
A
A
D
S
Continuous Drain  
Current (Note 2)  
Steady T = 25°C  
I
D
1.6  
1.1  
A
State  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
T = 85°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.42  
W
3
3
Drain  
Pulsed Drain Current  
t = 10 ms  
p
I
6.0  
A
V
DM  
1
2
ESD Capability (Note 3)  
C = 100 pF,  
RS = 1500 W  
ESD  
125  
N3  
SOT−23  
CASE 318  
STYLE 21  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
T
STG  
1
Gate  
2
Source  
Source Current (Body Diode)  
I
S
2.1  
A
N3  
M
= Specific Device Code  
= Date Code  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
ORDERING INFORMATION  
Symbol  
Max  
170  
100  
300  
Unit  
†
Device  
Package  
SOT−23  
SOT−23  
Shipping  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t < 10 s (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
q
q
JA  
JA  
JA  
MGSF1N03LT1  
MGSF1N03LT3  
MGSF1N03LT3G  
3000/Tape & Reel  
10000/Tape & Reel  
R
R
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Surface−mounted on FR4 board using 1 in sq pad size.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. ESD Rating Information: HBM Class 0.  
SOT−23 10000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
March, 2005 − Rev. 7  
MGSF1N03LT1/D  
 
1234

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MGSF1N03LT3 替代型号

型号 品牌 替代类型 描述 数据表
MGSF1N03LT1G ONSEMI

类似代替

 单 N 沟道小信号功率 MOSFET 30V，2.1A，100 mΩ
MGSF1N03LT3G ONSEMI

类似代替

 Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
MGSF1N03LT1 ONSEMI

类似代替

 Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23

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