是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.73 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 2.8 A | 最大漏极电流 (ID): | 2.8 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.25 W |
最大脉冲漏极电流 (IDM): | 5 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGSF2N02ELT3G | ONSEMI |
获取价格 |
2.8 Amps, 20 Volts, N−Channel SOT−23 | |
MGSF2N02ELT3G | TYSEMI |
获取价格 |
2.8 Amps, 20 Volts, NâChannel SOTâ23 Pbâ | |
MGSF2P02HD | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 20 Volts | |
MGSF2P02HD | MOTOROLA |
获取价格 |
1.3A, 20V, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6 | |
MGSF2P02HDR2 | MOTOROLA |
获取价格 |
1.3A, 20V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, TSOP-6 | |
MGSF2P02HDT1 | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 20 Volts | |
MGSF2P02HDT3 | ONSEMI |
获取价格 |
Power MOSFET 2 Amps, 20 Volts | |
MGSF3441V | ONSEMI |
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3300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, TSOP-6 | |
MGSF3441VT1 | MOTOROLA |
获取价格 |
Low rDS(on) Small-signal MOSFETs TMOS Single P=Channel Field Effect Transistors | |
MGSF3441VTD | MOTOROLA |
获取价格 |
Low rDS(on) Small-signal MOSFETs TMOS Single P=Channel Field Effect Transistors |